WIT Press


Low Temperature Wafer Bonding On Silicon Nitride

Price

Free (open access)

Paper DOI

10.2495/MIC950341

Volume

13

Pages

8

Published

1995

Size

742 kb

Author(s)

A.G. Pedrine, J.C. De Poorter, L. De Schepper & K. Baeif

Abstract

In the fabrication of micromachined devices, wafer bonding is an increasingly used technique for joining wafers. Most wafer bonding processes used today require firing temperatures above 800°C, which limits the use of this technique. For application in back-end processing, we developed a low temperature wafer bonding technique on LPCVD Si,N4 coated wafers. After firing bonded wafers at 250-350°C, the bonding strength was about 200erg/cnf. However, the presence of gas bubbles at the bonded interface was observed. As a demonstrator application, a micromachined Si wafer containing membranes was bonded to a finished Si/Pyrex micromachined device wafer. 1 Introduction Bonding at wafer scale is in many cases one of the last steps (before dicing) in the fabrication process of a mi

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