Author(s)

T. Rang

Abstract

Simple analytical model for metal - semiconductor non-ohmic (Schottky) contact using thermionic emission theory is described. This model is applied to alloy metal - n-SiC substrate contact. The ratio of areas, occupied by different metals at the surface interface will directly determine the effective barrier height of the Schottky contact. Already very weak presentage of the metal with lower barrier height in alloy, drastically decreases the effective barrier height at the interface. The anisotropy of the material has practically zero influence on barrier height. However, the current flow through the contact strongly depends on crystal direction and on the ratio of areas, occupied by different metals at the surface Under certain circumstances this may occour the failure of the contact. 1 Introduction

Keywords