WIT Press


Complete Simulation Support For Orientation Dependent Etched MEMS

Price

Free (open access)

Paper DOI

10.2495/MIC970261

Volume

34

Pages

10

Published

1997

Size

1,060 kb

Author(s)

D. Zielke & J. Fruhauf

Abstract

The simulation of orientation dependent etching of silicon is demonstrated b\ some examples. The intention is to describe the different solutions to simulate this process and to get the interface to the common CAD-environment 1. Introduction Orientation dependent etching is the dominant process in shaping of bulk silicon MEMS. The etched shapes are strongly related on the etch rates of different crystallographic faces in silicon. From this, two problems result: firstly, the design of etch masks must take into account the specific anisotropy of etching, and secondly only characteristical and not free designable shapes can be produced. That implies that tools are required for etch mask design,

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