WIT Press


The Improvement In A GaAs Power Sensor Microsystem Technology And Simulation

Price

Free (open access)

Paper DOI

10.2495/MIC970051

Volume

34

Pages

9

Published

1997

Size

869 kb

Author(s)

T. Lalinsky, E. Burian, Z. Mozolova, S. Hascik, J. Kuzmik, P. Bohacek & Z. Hatzopoulos

Abstract

The technology of a GaAs micromachined power sensor microsystem based on a 2 jam thick cantilevers is demonstrated. The key sensor power-temperature transfer characteristics for se- lected ambient gaseous environments are evaluated. An excellent linearity in the transfer characteristics is achieved for the air and argon environments with the thermal resistance values as high as 13000 K/W and 16000 K/W, respectively. The temperature spatial dis- tribution and transients in the sensor cantilever are simulated by solving the steady state and time dependent two-dimensional heat flow equation

Keywords