Author(s)

T. Rang

Abstract

The objective of this article is to describe the model for determination of the tunnelling current in the metal SiC interfaces. The model introduces the tunnelling current into the basic semiconductor transport equation modifying the continuity equation in such way that quantum- mechanical behaviour of tunnelling mechanism is united with the macroscopic behaviour of charge carriers on diffusion-drift transport. From generalised model some examples for metal contacts to 6H-and 4H-SiC substrates has been evaluated. The dependence of tunnelling current from epitaxial layer doping concentration, barrier height and temperature is examined and the influence of lateral inhomogeneities at the interface on tunnelling current is discusse

Keywords