WIT Press


Optimisation Of A New Strain Sensor Based On The Piezo-tunneling Effect

Price

Free (open access)

Paper DOI

10.2495/MIC970141

Volume

34

Pages

10

Published

1997

Size

1,042 kb

Author(s)

A.P. Friedrich, PA. Besse, C.M.A. Ashruf & R.S. Popovic

Abstract

In this paper we analyse a new type of silicon strain sensor based on the piezo-tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been opti- mised to obtain a prevailing tunneling current at the reverse biased operating point. The optimi- sation was performed using a two-dimensional simulation of the fabrication process. The simulated profiles have been used for the numerical determination of the current flow in the structure. The experimental results clearly show that the tunneling current is dominant in the optimised devices. Finally, an analytical model of the tunneling current in a highly doped p-n junction is discussed. 1 Introduction In a recent paper [1], we have described a new

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