WIT Press


Particle Modeling Of Semiconductor Quantum Devices

Price

Free (open access)

Paper DOI

10.2495/ES010051

Volume

31

Pages

9

Published

2001

Size

806 kb

Author(s)

T. Miyoshi & H. Tsuchiya

Abstract

Particle modeling of semiconductor quantum devices T. Miyoshi & H. Tsuchiya Department of Electrical and Electronics Engineering, Kobe University, Japan Abstract With the scaling down of semiconductor device deeply into the sub-O.l/mi region, it is increasingly important to take quantum mechanical effects of carrier transport into account in device simulation. However, it is difficult to simulate practical devices where clear semi-classical and quantum features coexist, as is the case for nanoscale devices at normal temperatures. In this paper, we present a particle description of quantum phenomena based upon a quantum force derived from the Wigner's transport formalism. The quan- tum force can be incorporated into the driving force term of the Boltzmarm transport equation, which enables us to utilize the well-developed particle Monte Carlo computational techniques. We demonstrate that the quantum transport effects such as quantum tunneling and energy quantization are incorporated in the

Keywords