WIT Press


Compact Modelling Of Process Related Effects On Electrical Behaviour Of CMOS Transistors

Price

Free (open access)

Paper DOI

10.2495/ES010041

Volume

31

Pages

10

Published

2001

Size

971 kb

Author(s)

A. Burenkov & X. Zhou

Abstract

Compact modelling of process related effects on electrical behaviour of CMOS transistors A. Burenkov & X Zhou Fraunhofer-Institut fuer Integrierte Schaltungen, Erlangen, Germany Abstract To account for the process related effects on the electrical behaviour of CMOS transistors, the numerical coefficients of the SPICE models were considered as variables dependent on processing conditions. For each relevant SPICE model coefficient, a second order polynomial model as a function of processing pa- rameters was built Such polynomial models provide a set of values of the SPICE model coefficients for each process variant. In this way an analytical description of the electrical behaviour of the transistors in dependence of processing pa- rameters such as diffusion/oxidation times, implantation doses, etc. becomes possible. Such a kind of modelling of process related effects needs much less computer time than a purely numerical simulation. Comparisons between the numerical and compact simulati

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