Author(s)

T. Rang

Abstract

Modelling of in homogeneities of SiC Schottky interfaces T. Rang Department of Electronics, Tallinn Technical University, Estonia Abstract In tliis general paper, a short description of the generation of inhomogeneities at SiC Schottky interfaces due to technology and crystal growth is given. The problem of the local and the effective barrier heights is described. Finally, simulation results of the current crowding phenomenon and specific contact resistivity are presented. 1 Introduction Metallic films are required to provide interconnection between semiconductor devices and the outside world, which, in the majority of cases, forms with the semiconductor substrate a certain type of junction. Depending mostly on barrier height between the metal and semiconductor, two extreme types of contacts from the point of view of current flow will be created: nearly linear (Ohmic contact), and strongly non-linear (Schottky contact). For the Schottky contacts the most important characteris

Keywords