WIT Press


Hot Spots Caused By Contact Inhomogeneities In 4H- And 6H-SJC Schottky Structures

Price

Free (open access)

Paper DOI

10.2495/HT000401

Volume

27

Pages

8

Published

2000

Size

247 kb

Author(s)

R. Kurel, T. Rang

Abstract

Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structures R. Kurel, T. Rang Department of Electronics Tallinn Technical University, Estonia Abstract By manufacturing of large area Schottky contacts to semiconductor surfaces, the interface area will have a number of inhomogeneities (e.g. grain size effects, diffusional creeps, other boundary effects, etc.). These inhomogeneities lead to the local characteristics at the interface. It means that the interaction of several metals or other materials at the semiconductor interface will lead to the formation of different local barriers at the different sub-regions. The electrical and thermal behavior of such effects is studied using SPICE simulation package SCHOTSIC, developed at the Department of Electronics, TTU. This package simulates both electrical and thermal processes in Schottky diode using standard SPICE envi- ronment. Iterative simulation process is used to coupe with self-heating effect. The Schottky contact of s

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