Author(s)

A.M. Baling, M.M. Mihailovici, D.G. Baltean, A. Neculae & St. Baling

Abstract

The influence of the solid inclusions on the heat transport in the precrystallization-zone A.M. Baling M.M. MihailovicP, D.G. Balteaif, A. Neculae' & St. Baling ^ Department of Physics, University of the West Timisoara, Romania. 2 Department of Mathematics, University of the West Timisoara, Romania. Abstract The main purpose of this paper is to evaluate the influence of the solid inclusions located in the precrystallization-zone on the heat transport in this region. We make this evaluation in the case of semiconductor crystal growth by Bridgman- Stockbarger method, for crystal and melt having thermophysical properties similar to those of gallium-doped germanium. For this reason we establish, by homogenization method, a new heat transport equation in the precrystallization- zone. This equation takes into account the physical phenomena convection, diffusion and the presence of solid inclusions. Using this new equation we compute the thermal field and compare it to the thermal

Keywords