WIT Press


Enhanced Quasi-multiple Medium Technology For Fast Finite-domain Electrostatic BEM Simulation

Price

Free (open access)

Paper DOI

10.2495/BT030071

Volume

34

Pages

10

Published

2003

Size

569 kb

Author(s)

W. Yu & Z. Wang

Abstract

Enhanced quasi-multiple medium technology for fast finite-domain electrostatic BEM simulation W.Yu & 2. Wang Department of Computer Science and Technology, Tsinghua University, China. Abstract Fast 3D electrostatic simulations are of increasing importance in the area of VLSI interconnects and MEMS, especially for the current deep submicron semiconductor technology. The parasitic capacitance among the interconnects is usually simulated within a finite domain with the mixed Neumann and Dirichlet boundaries. The boundary element method (BEM) is very suitable for such kind of electrostatic computation. Furthermore, a new technology called quasimultiple medium (QMM) method has been proposed to accelerate the large-scale BEM computation. The QMM technology has been applied to the 3D finitedomain BEM simulation of the interconnect capacitor, and it greatly reduced the computational time and memory usage. In this paper, an approach is presented to enhance the QMM technology, in which the QMM cutting

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