WIT Press


Quantum Mechanical Device Simulation Of Ultrasmall MOSFETs

Price

Free (open access)

Paper DOI

10.2495/ES990271

Volume

22

Pages

10

Published

1999

Size

881 kb

Author(s)

T. Miyoshi and H. Tsuchiya

Abstract

With the scaling down of LSI devices, the quantum mechanical treatment of carrier transport becomes more important in device modeling. In this paper, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. The quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. 1 Introduction For more than thirty years, the progress of LSI technology has been based upon the downsizing of MOSFET's. because the downsizing has been the most effective way to improve the performance and to increase the packing density of LSI circuits. The number of devices contained on a single chip has approximately

Keywords