Author(s)

L.Cecchi, F. Alimenti, P. Ciampolini, L. Roselli, P. Mezzanotte and R. Sorrentino

Abstract

Due to the increasing complexity of electronic systems and subsystems, versatile simulation approaches, able to combine electromagnetic full-wave analysis with models of non linear electronic devices, are becoming very at- tractive. Among them, the so called Lumped Element (LE)-FDTD method, for its characteristic to easily account for non linearities is one of the most promising ones. Unfortunately, its application to practical circuits is still limited by the long simulation time needed to achieve the biasing condition all over the structure. This work proposes a way to avoid the simulation of the transient, thus allowing efficient FDTD analysis of th

Keywords