Author(s)

OLEKSANDR VEHER, NATALJA SLEPTSUK, JANA TOOMPUU, OLEG KOROLKOV, TOOMAS RANG

Abstract

It is well known that reverse recovery time (τ_rr) is important when a diode is used in a switching application. It is the time taken to switch the diode from its forward conducting or ‘ON’ state to the reverse ‘OFF’ state. As a result, there is reverse current overshoot when switching from the forward conducting state to the reverse blocking state. The time is needed to remove the reverse recovery charge (Qrr) as a Schottky diode is normally measured in nanoseconds, ns. Some diodes exhibit τ_rrs of 100p/s. The experimental part consists of the measurements of the reverse recovery time on a special tester – LEMSYS DMS dynamic parameter system – the SiC Schottky diodes C3D10060A are used. In the present work, measuring the results of reverse recovery time depends on additional resistors and condensers connected to the initial diode. It has been shown that the recovery time is mostly determined by the barrier capacitance, and should not depend on the resistance of the base.

Keywords

reverse recovery time, Schottky diode, barrier capacitance, series-on resistance