WIT Press


Computational Versus Experimental Methods In Laser Processing Of Binary Semiconducting Systems

Price

Free (open access)

Paper DOI

10.2495/CMEM010631

Volume

30

Pages

10

Published

2001

Size

908 kb

Author(s)

R. Cerny, P. Prikryl

Abstract

Computational versus experimental methods on laser processing of binary semiconducting systems R. Cerny', P. PfikryP ^Department of Structural Mechanics, Faculty of Civil Engineering, Czech Technical University, Czech Republic ^ Mathematical Institute, Academy of Sciences, Czech Republic Abstract A computational model of pulsed laser-induced phase transitions in binary semiconducting systems is presented. The nonequilibrium phase change processes due to the high velocities of the interface are modeled using the concept of Wilson-Frenkel interface response function and nonequilibrium segregation coefficients are also considered. In the computational experi- ments, two real experimental situations are simulated, the first being the irradiation of a 150 nm 8*50Geso alloy on 500 nm SOS (silicon on sub- strate) by Q-switched ruby laser (694 nm, 30 ns FWHM), the second the irradiation of the system of 25 nm of amorphous Ge and 210 nm polycrys- talline silicon on quartz substrate b

Keywords