Author(s)

R. Cerny, P. Prikryl

Abstract

Computational versus experimental methods on laser processing of binary semiconducting systems R. Cerny', P. PfikryP ^Department of Structural Mechanics, Faculty of Civil Engineering, Czech Technical University, Czech Republic ^ Mathematical Institute, Academy of Sciences, Czech Republic Abstract A computational model of pulsed laser-induced phase transitions in binary semiconducting systems is presented. The nonequilibrium phase change processes due to the high velocities of the interface are modeled using the concept of Wilson-Frenkel interface response function and nonequilibrium segregation coefficients are also considered. In the computational experi- ments, two real experimental situations are simulated, the first being the irradiation of a 150 nm 8*50Geso alloy on 500 nm SOS (silicon on sub- strate) by Q-switched ruby laser (694 nm, 30 ns FWHM), the second the irradiation of the system of 25 nm of amorphous Ge and 210 nm polycrys- talline silicon on quartz substrate b

Keywords