WIT Press


Heat Field Rotation Method Of Crystal Growth: Numerical Simulations

Price

Free (open access)

Paper DOI

10.2495/HT020381

Volume

35

Pages

10

Published

2002

Size

594 kb

Author(s)

A E Kokh, V N Popov & L A Mironova

Abstract

In that paper we present results of numerical simulation of convective flows which exist in BSO (Bi12SiO20) and Si melts while growing crystals in Czochralski configuration in a rotating heat field of first order axial symmetry (rotL1). The numerical simulation is based on the solution of non-stationary three-dimensional Navier-Stokes equations and heat-transfer equations in Boussinesq approximation. The results showed that heat field rotation makes possible an efficient mixing of molten material without any mechanical tools. Trajectories of closed toroidal flows produced by contact-free control over heat-mass transfer process and having the azimuthal component of velocity vector have been simulated in the melts.

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