WIT Press


Time Dependent Simulations Of Heat Transfer In A Czochralski Furnace

Price

Free (open access)

Paper DOI

10.2495/HT020181

Volume

35

Pages

9

Published

2002

Size

2067 kb

Author(s)

C Weichmann, J Nitschkowski, K-H Hoffmann & A Voigt

Abstract

We present simulations of a crystal growth process in a Si Czochralski furnace. In these simulations heat radiation, convective heat transfer and heat conduction are taken in account. The free interface between melt and crystal as well as the free capillary boundary between melt and gas are considered. The results are compared for time dependent simulations, taking account of the growing of the crystal, and quasi steady simulations at various time steps.

Keywords