Author(s)

E. Bar, J. Lorenz & H. Ryssel

Abstract

A three-dimensional program for predicting the geometry of layers deposited by low-pressure chemical vapor deposition (LPCVD) has been developed. For the calculation of the growth rate for each surface position, a particle redistribution model is employed which can handle one or two reactive precursors controlling layer growth. The model is implemented using a triangular description of the surface. Simulations for tungsten LPCVD and low-temperature oxide (LTO) deposition are shown. The simulations agree well with experimental data. The simulator is designed as a module of the European universal three-dimensional process simulator PROMPT. 1 Introduction Shrinking device dimensions and increasing integration density of devices in integrated circuits require

Keywords