WIT Press

Full-wave Electromagnetic Modelling Of Microwave Devices: Application To Localized Elements And Linear Diode Amplifier

Price

Free (open access)

Paper DOI

10.2495/ES960421

Volume

11

Pages

8

Published

1996

Size

451 kb

Author(s)

S. Madrangeas, S. Verdeyme, M. Aubourg & P. Guillon

Abstract

Full-wave electromagnetic modelling of microwave devices: application to localized elements and linear diode amplifier S. Madrangeas, S. Verdeyme, M. Aubourg, P. Guillon *£COM. URA CNRS n° 356, Faculte des Sciences 123 Avenue A. Thomas, 87060 Limoges Cedex France ABSTRACT The segmentation approach generally used to analyze complex microwave devices raises problems due to the location of reference pTanes To overcome these difficulties and to take into account couplm%et%n F E M 'r 7£T » ™» ** ™* Elem Meth (Kh.M.) (M. Aubourg [1]) to the total characterization of devices containing both passive areas and active components. INTRODUCTION In microwave and millimeter wave hybrid and monolithic integrated devices discontinuities between circuits elements are either realized duttot " ' T T* '" ** ***° * **** " -sened involun^J due to imposed small size or due to the insertion of active elements I he standard approach which is common

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