WIT Press

Two Dimensional Modelling Of Alloy Metal Schottky Contacts To 6H SiC Substrate

Price

Free (open access)

Paper DOI

10.2495/ES960361

Volume

11

Pages

10

Published

1996

Size

854 kb

Author(s)

T. Rang & A. Blum

Abstract

Two dimensional model for Schottky contacts to SiC substrate is described. The anisotropy of the substrate material has been taken into account. It is shown that by the modelling of the alloy metal contacts, strong current "push out" effect exists, which is probably caused by the anisotropy of the material. This "push out" effect occours near the boundaries, where the overgoing from one metal in compound to another takes place It is also shown that by modelling the Schottky contacts from alloy metals, using so called effective barrier height, could lead to a serious mistakes in interpretation of results

Keywords