WIT Press

Three-dimensional Simulation Of Ion Implantation

Price

Free (open access)

Paper DOI

10.2495/ES960351

Volume

11

Pages

9

Published

1996

Size

802 kb

Author(s)

K. Tietzel, A. Bourenkov, J. Lorenz & H. Ryssel

Abstract

In this paper, the program module PROMPT/IMP3D for the three- dimensional simulation of ion implantation in VLSI applications is presented. It calculates the distribution of implanted impurities on an arbitrary grid inside a three-dimensional simulation area. The simula- tion algorithm uses a convolution of analytical point response functions over the irradiated surface. A novel algorithm has been developed which performs a preprocessing of initial geometrical data and effectively reuses the geometric information prepared at the first stage. The module is im- plemented as a C** class library and is incorporated into the PROMPT TCAD system. Computing times are approximately proportional to the number of grid points and amount to 3 to 5 minutes per 1000 grid

Keywords