WIT Press

Finite Element Analysis Of Guided Modes In A Silicon-quantum Wire

Price

Free (open access)

Paper DOI

10.2495/ES960331

Volume

11

Pages

10

Published

1996

Size

771 kb

Author(s)

T. Miyoshi, Y. Okawa, H. Tsuchiya & M. Ogawa

Abstract

The eigenmodes of electron wave propagating through a physically confined Si-quantum wire by a Si02 barrier are analyzed self-consistently by using a finite element method. The anisotropic effective mass tensor corresponding to the three inequivalent alignments of conduction band valleys in Si and the continuity of the probability current densities at the Si-SiO] interface are duly taken into account. As a result, the eigenenergies of electron wave and the electron density distribution are found to be greatly affected by the electron-electron interaction. It is also demonstrated that the number of guided modes in the Si-quantum wire is controlled by the gate bias voltage. 1 Introduction A Si-quantum wire on a SOI(silicon on insulator) substrate is a promising quantum device, because it is

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