WIT Press

Numerical Analysis Of Electronic Circuits With FDTD-LE Technique

Price

Free (open access)

Paper DOI

10.2495/ES960211

Volume

11

Pages

8

Published

1996

Size

519 kb

Author(s)

M. Matteucci, P. Mezzanotte, L. Roselli & P. Ciampolini

Abstract

In this paper, an accurate technique for the simulation of high-frequency electronic circuits is described. The circuit simulator is based on a three dimensional implementation of the Lumped Element FDTD (LE-FDTD). A fairly wide library of basic linear and non linear device models suitable for HF simulations has been arranged, which includes: linear resistors, inductors and capacitors, matched voltage generators, pn and Shottky diodes, bipolar transistors, and MeSFETs. Dynamic, as well as static device behavior is taken into account. Some simulation examples are given, and compared with alternative simulation techniques. 1 Introduction In this paper, a circuit simulation strategy is discussed, based on the Finite- Difference Time-Domain method a

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