Author(s)

V. A. Trofimov, M. M. Loginova, V. A. Egorenkov

Abstract

Using the original two-step iteration process, we develop a conservative finite-difference scheme for the problem of femtosecond pulse propagation in semiconductor under the action of an external electric field. Its advantages consist in its applicability for the problem with non-uniform boundary conditions and it possesses also a property of asymptotic stability. Therefore, it is possible to provide a computation for long interval time without losing the conservatism property. We pay special attention to the calculation of initial function distribution, which are a solution of the set of 2D stationary partial differential equations. We solve this set of equations by using an additional iteration process that is similar to the iteration process applied for the solution of the main problem. Using computer simulation, it is shown that the proposed conservative finite-difference scheme is an effective tool for calculation of complicated regimes of semiconductor characteristic changing. Semiconductor plasma generation under the action of external electric field is investigated.

Keywords

conservative finite-difference scheme, iteration process convergence, femtosecond pulse, semiconductor