Author(s)

M. Bachtold, J.G. Korvink and H. Baltes

Abstract

Accurate electrostatic simulations are required in the areas of MEMS and VLSI interconnects. Typical simulations involve complex geometries and various boundary conditions. The boundary element method (BEM) is well suited to such computations. For highly accurate solutions the meshing of the geometry becomes increasingly important. A scheme is presented which allows generat- ing a good mesh automatically. An error indicator based on boundary integral equations (BIE) monitors the simulation accuracy in each boundary element. Mesh refinement is applied to areas which contribute strongly to the overall error. The generated, refined meshes lead to significantly higher accuracy for a given computational eff

Keywords