Author(s)

R. Cemf & P. Pfikryl

Abstract

The mechanisms of lateral growth of pc-Si induced by the irradiation of an a-Si thin film by a ns-pulse laser moving with constant velocity are studied in the paper. Pulsed-laser induced phase transformations in a-Si are modeled using two basic types of approach. The first of them assumes a direct transition between a-Si and 1-Si without any intermediate phases, the other approach is based on the assumption that melting of a thin surface layer is immediately followed by resolidification in the form of pc-Si, which initiates explosive crystallization. In a practical application

Keywords