WIT Press


Polycrystalline Ferroelectric Thin Film Capacitors For Non- Volatile Random Access Memories: Self-consistent, Quasi-static Calculation, And Comparison With Experiment

Price

Free (open access)

Paper DOI

10.2495/EL930411

Volume

3

Pages

8

Published

1993

Size

849 kb

Author(s)

P. Zurcher & F.D. Gealy

Abstract

Polycrystalline ferroelectric thin film capacitors for non- volatile random access memories: self-consistent, quasi-static calculation, and comparison with experiment P. Zurcher, F.D. Gealy Rantron Corp., 1850 Ramtron Drive, Colorado Springs, CO ABSTRACT A quasi-static, quasi-finite element ferroelectric capacitor model has been developed that describes major features of experimentally measured data. The polycrystalline thin film ferroelectric materials parameters such as dielectric distribution, coercive field and spontaneous polarization distribu- tions (e.g. grain orientation as well as compositional variation) and non- ferroelectric regions are simulated as discrete layers. Electric fields, polarization, and electrode charge as a function of an arbitrary voltage input are calculated using a self-consistent, quasi-static, two-dimensional quasi-finite element approach. Although this approach is not suitable for electronic/ionic conduction modeling, it describes major feat

Keywords