WIT Press


A Parameters Extraction Method For GaAs FET Model Based On An Enhanced Simulated Annealing Algorithm

Price

Free (open access)

Paper DOI

10.2495/EL930301

Volume

3

Pages

7

Published

1993

Size

612 kb

Author(s)

G. Berthiau & P. Siarr

Abstract

A parameters extraction method for GaAs FET model based on an enhanced simulated annealing algorithm G. Berthiau," P. Siarr/ o Commissariat a VEnergie Atomique, Departement d'Electronique et d'Instrumentation Nucleaire, Centre d'Etudes de Saclay, 91191 Gif sur Yvette Cedex, France ^ Laboratoire d'Electronique et de Physique Appliquee, Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry, France ABSTRACT: An Enhanced Simulated Annealing, adapted to continuous variables problems, has been previously elaborated. Variables discretization has received special attention and several complementary stopping criteria have been developed and implemented to reduce the computational costs. This method, coupled with an "open" circuit simulator _SPICE-PAC_ has been used for minimizing objective functions which describe circuit performance optimization problems or component model fitting to experimental data. In the same way synaptic coefficients of a

Keywords